STG(B,D,F,P)5H60DF Datasheet دیتاشیت

STG(B,D,F,P)5H60DF Datasheet

مشخصات دیتاشیت

نام دیتاشیت STG(B,D,F,P)5H60DF Datasheet
حجم فایل 909.326 کیلوبایت
نوع فایل pdf
تعداد صفحات 31

مشاهده دیتاشیت STG(B,D,F,P)5H60DF Datasheet

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سایر مستندات

STGD5H60DF 31 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGD5H60DF
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 83W
  • Turn?on Delay Time (Td(on)): 30ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.056mJ
  • Total Gate Charge (Qg@Ic,Vge): 43nC
  • Turn?off Delay Time (Td(off)): 140ns
  • Pulsed Collector Current (Icm): 20A
  • Turn?off Switching Loss (Eoff): 0.0785mJ
  • Diode Reverse Recovery Time (Trr): 134.5ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,5A
  • Package: TO-252
  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
  • Power - Max: 83W
  • Switching Energy: 56µJ (on), 78.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 43nC
  • Td (on/off) @ 25°C: 30ns/140ns
  • Test Condition: 400V, 5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 134.5ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: STGD5
  • detail: IGBT Trench Field Stop 600V 10A 83W Surface Mount DPAK

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